? semiconductor components industries, llc, 2006 august, 2006 ? rev. 4 1 publication order number: MTP60N06HD/d MTP60N06HD preferred device power mosfet 60 amps, 60 volts n ? channel to ? 220 this power mosfet is designed to withstand high energy in the avalanche and commutation modes. the energy efficient design also offers a drain ? to ? source diode with a fast recovery time. designed for low voltage, high speed switching applications in power supplies, converters and pwm motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ? avalanche energy specified ? source ? to ? drain diode recovery time comparable to a discrete fast recovery diode ? diode is characterized for use in bridge circuits ? i dss and v ds(on) specified at elevated temperature maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit drain ? source voltage v dss 60 vdc drain ? gate voltage (r gs = 1.0 m ) v dgr 60 vdc gate ? source voltage ? continuous ? non ? repetitive (t p 10 ms) v gs v gsm 20 30 vdc vpk drain current ? continuous ? continuous @ 100 c ? single pulse (t p 10 s) i d i d i dm 60 42.3 180 adc apk total power dissipation derate above 25 c p d 150 1.0 watts w/ c operating and storage temperature range t j , t stg ? 55 to 175 c single pulse drain ? to ? source avalanche energy ? starting t j = 25 c (v dd = 25 vdc, v gs = 10 vdc, peak i l = 60 apk, l = 0.3 mh, r g = 25 ) e as 540 mj thermal resistance ? junction to case ? junction to ambient r jc r ja 1.0 62.5 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 60 amperes 60 volts r ds(on) = 14 m preferred devices are recommended choices for future use and best overall value. device package shipping ordering information MTP60N06HD to ? 220ab 50 units/rail to ? 220ab case 221a style 5 1 2 3 4 http://onsemi.com n ? channel d s g marking diagram & pin assignment MTP60N06HD = device code ll = location code y = year ww = work week MTP60N06HD llyww 1 gate 3 source 4 drain 2 drain
MTP60N06HD http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? to ? source breakdown voltage (c pk 2.0) (note 3) (v gs = 0 vdc, i d = 250 adc) temperature coefficient (positive) v (br)dss 60 ? ? 71 ? ? vdc mv/ c zero gate voltage drain current (v ds = 60 vdc, v gs = 0 vdc) (v ds = 60 vdc, v gs = 0 vdc, t j = 125 c) i dss ? ? ? ? 10 100 adc gate ? body leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss ? ? 100 nadc on characteristics (note 1) gate threshold voltage (c pk 3.0) (note 3) (v ds = v gs , i d = 250 adc) threshold temperature coefficient (negative) v gs(th) 2.0 ? 3.0 7.0 4.0 ? vdc mv/ c static drain ? to ? source on ? resistance (c pk 3.0) (note 3) (v gs = 10 vdc, i d = 30 adc) r ds(on) ? 0.011 0.014 ohm drain ? to ? source on ? voltage (v gs = 10 vdc) (i d = 60 adc) (i d = 30 adc, t j = 125 c) v ds(on) ? ? ? ? 1.0 0.9 vdc forward transconductance (v ds = 5.0 vdc, i d = 30 adc) g fs 15 20 ? mhos dynamic characteristics input capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz) c iss ? 1950 2800 pf output capacitance c oss ? 660 924 transfer capacitance c rss ? 147 300 switching characteristics (note 2) turn ? on delay time (v dd = 30 vdc, i d = 60 adc, v gs = 10 vdc, r g = 9.1 ) t d(on) ? 14 26 ns rise time t r ? 197 394 turn ? off delay time t d(off) ? 50 102 fall time t f ? 124 246 gate charge (see figure 8) (v ds = 48 vdc, i d = 60 adc, v gs = 10 vdc) q t ? 51 71 nc q 1 ? 12 ? q 2 ? 24 ? q 3 ? 21 ? source ? drain diode characteristics forward on ? voltage (i s = 60 adc, v gs = 0 vdc) (i s = 60 adc, v gs = 0 vdc, t j = 125 c) v sd ? ? 0.99 0.89 1.2 ? vdc reverse recovery time (see figure 15) (i s = 60 adc, v gs = 0 vdc, di s /dt = 100 a/ s) t rr ? 60 ? ns t a ? 36 ? t b ? 24 ? reverse recovery stored charge q rr ? 0.143 ? c internal package inductance internal drain inductance (measured from contact screw on tab to center of die) (measured from the drain lead 0.25 from package to center of die) l d ? ? 3.5 4.5 ? ? nh internal source inductance (measured from the source lead 0.25 from package to source bond pad) l s ? 7.5 ? nh 1. pulse test: pulse width 300 s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperature. 3. reflects typical values. c pk = max limit ? typ 3 x sigma
MTP60N06HD http://onsemi.com 3 typical electrical characteristics r ds(on) , drain?to?source resistance (normalized) r ds(on) , drain?to?source resistance (ohms) r ds(on) , drain?to?source resistance (ohms) i d , drain current (amps) t j , junction temperature ( c) v ds , drain?to?source voltage (volts) i dss , leakage (na) i d , drain current (amps) i d , drain current (amps) v ds , drain?to?source voltage (volts) v gs , gate?to?source voltage (volts) i d , drain current (amps) figure 1. on ? region characteristics figure 2. transfer characteristics figure 3. on ? resistance versus drain current and temperature figure 4. on ? resistance versus drain current and gate voltage figure 5. on ? resistance variation with temperature figure 6. drain ? to ? source leakage current versus voltage 0 1.0 2.0 3.0 4.0 5.0 0.5 1.5 2.5 3.5 4.5 0 20 40 80 120 100 60 5 v 6 v t j = 25 c 7 v 0 20 40 80 120 100 60 2.0 2.8 3.6 4.4 6.0 7.6 5.2 6.8 v ds 10 v 100 c 25 c t j = ?55 c 0.006 0.008 0.012 0.016 0.020 0.018 0.014 0.010 0 20 40 60 80 120 100 v gs = 10 v t j = 100 c ?55 c 25 c 0 20 40 60 80 120 100 0.0100 0.0108 0.0116 0.0124 0.0132 0.0128 0.0120 0.0112 0.0104 t j = 25 c 15 v v gs = 10 v ?50 ?25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.4 1.8 1.2 1.6 1 10 100 1000 01020 405060 30 v gs = 0 v t j = 125 c 100 c 25 c 110 10 30 50 70 90 110 10 30 50 70 90 v gs = 10 v 8 v 9 v v gs = 10 v i d = 30 a
MTP60N06HD http://onsemi.com 4 power mosfet switching switching behavior is most easily modeled and predicted by recognizing that the power mosfet is charge controlled. the lengths of various switching intervals ( t) are determined by how fast the fet input capacitance can be charged by current from the generator. the published capacitance data is difficult to use for calculating rise and fall because drain ? gate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av) ) can be made from a rudimentary analysis of the drive circuit so that t = q/i g(av) during the rise and fall time interval when switching a resistive load, v gs remains virtually constant at a level known as the plateau voltage, v sgp . therefore, rise and fall times may be approximated by the following: t r = q 2 x r g /(v gg ? v gsp ) t f = q 2 x r g /v gsp where v gg = the gate drive voltage, which varies from zero to v gg r g = the gate drive resistance and q 2 and v gsp are read from the gate charge curve. during the turn ? on and turn ? off delay times, gate current is not constant. the simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an rc network. the equations are: t d(on) = r g c iss in [v gg /(v gg ? v gsp )] t d(off) = r g c iss in (v gg /v gsp ) the capacitance (c iss ) is read from the capacitance curve at a voltage corresponding to the off ? state condition when calculating t d(on) and is read at a voltage corresponding to the on ? state when calculating t d(off) . at high switching speeds, parasitic circuit elements complicate the analysis. the inductance of the mosfet source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. the voltage is determined by ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. the mosfet output capacitance also complicates the mathematics. and finally, mosfets have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. the resistive switching time variation versus gate resistance (figure 9) shows how typical switching performance is af fected by the parasitic circuit elements. if the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. the circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. power mosfets may be safely operated into an inductive load; however, snubbing reduces switching losses. c, capacitance (pf) gate?to?source or drain?to?source voltage (volts) 0 1000 2000 3000 5000 figure 7. capacitance variation 4000 10 0 10 15 20 25 v gs v ds 55 v ds = 0 v c iss c rss v gs = 0 v t j = 25 c c iss c oss c rss
MTP60N06HD http://onsemi.com 5 q t , total gate charge (nc) r g , gate resistance (ohms) t, time (ns) v ds , drain?to?source voltage (volts) v gs , gate?to?source voltage (volts) figure 8. gate ? to ? source and drain ? to ? source voltage versus total charge 1 10 100 10 100 1000 v dd = 30 v i d = 60 a v gs = 10 v t j = 25 c t r t f t d(on) t d(off) figure 9. resistive switching time variation versus gate resistance 0 8 24 40 48 56 16 32 10 6 2 0 8 4 12 60 50 40 30 10 20 0 qt q2 v gs i d = 60 a t j = 25 c v ds q3 q1 drain ? to ? source diode characteristics the switching characteristics of a mosfet body diode are very important in systems using it as a freewheeling or commutating diode. of particular interest are the reverse recovery characteristics which play a major role in determining switching losses, radiated noise, emi and rfi. system switching losses are largely due to the nature of the body diode itself. the body diode is a minority carrier device, therefore it has a finite reverse recovery time, t rr , due to the storage of minority carrier charge, q rr , as shown in the typical reverse recovery wave form of figure 12. it is this stored charge that, when cleared from the diode, passes through a potential and defines an energy loss. obviously, repeatedly forcing the diode through reverse recovery further increases switching losses. therefore, one would like a diode with short t rr and low q rr specifications to minimize these losses. the abruptness of diode reverse recovery effects the amount of radiated noise, voltage spikes, and current ringing. the mechanisms at work are finite irremovable circuit parasitic inductances and capacitances acted upon by high di/dts. the diode?s negative di/dt during t a is directly controlled by the device clearing the stored charge. however, the positive di/dt during t b is an uncontrollable diode characteristic and is usually the culprit that induces current ringing. therefore, when comparing diodes, the ratio of t b /t a serves as a good indicator of recovery abruptness and thus gives a comparative estimate of probable noise generated. a ratio of 1 is considered ideal and values less than 0.5 are considered snappy. compared to on semiconductor standard cell density low voltage mosfets, high cell density mosfet diodes are faster (shorter t rr ), have less stored charge and a softer reverse recovery characteristic. the softness advantage of the high cell density diode means they can be forced through reverse recovery at a higher di/dt than a standard cell mosfet diode without increasing the current ringing or the noise generated. in addition, power dissipation incurred from switching the diode will be less due to the shorter recovery time and lower switching losses. i s , source current (amps) v sd , source?to?drain voltage (volts) figure 10. diode forward voltage versus current 0 10 30 50 60 40 20 0.5 0.6 0.7 0.8 0.9 1.0 v gs = 0 v t j = 25 c
MTP60N06HD http://onsemi.com 6 i s , source current t, time figure 11. reverse recovery time (t rr ) di/dt = 300 a/ s standard cell density high cell density t b t rr t a t rr safe operating area the forward biased safe operating area curves define the maximum simultaneous drain ? to ? source voltage and drain current that a transistor can handle safely when it is forward biased. curves are based upon maximum peak junction temperature and a case temperature (t c ) of 25 c. peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in an569, ?transient thermal resistance ? general data and its use.? switching between the off ? state and the on ? state may traverse any load line provided neither rated peak current (i dm ) nor rated voltage (v dss ) is exceeded, and that the transition time (t r , t f ) does not exceed 10 s. in addition the total power averaged over a complete switching cycle must not exceed (t j(max) ? t c )/(r jc ). a power mosfet designated e ? fet can be safely used in switching circuits with unclamped inductive loads. for reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and must be adjusted for operating conditions differing from those specified. although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. the energy rating decreases non ? linearly with an increase of peak current in avalanche and peak junction temperature. although many e ? fets can withstand the stress of drain ? to ? source avalanche at currents up to rated pulsed current (i dm ), the energy rating is specified at rated continuous current (i d ), in accordance with industry custom. the energy rating must be derated for temperature as shown in the accompanying graph (figure 13). maximum energy at currents below rated continuous i d can safely be assumed to equal the values indicated. v ds , drain?to?source voltage (volts) t j , starting junction temperature ( c) e as , single pulse drain?to?source avalanche energy (mj) i d , drain current (amps) figure 12. maximum rated forward biased safe operating area 25 150 50 100 125 75 0 600 400 300 200 100 500 figure 13. maximum avalanche energy versus starting junction temperature 0.1 1.0 10 100 1 10 100 1000 dc 100 s 1 ms 10 ms 10 s r ds(on) limit thermal limit package limit v gs = 20 v single pulse t c = 25 c i d = 60 a
MTP60N06HD http://onsemi.com 7 figure 14. thermal response di/dt t rr t a t p i s 0.25 i s time i s t b r(t), effective transient thermal resistance (normalized) t, time (s) figure 15. diode reverse recovery waveform 1.0e?05 1.0e?04 1.0e?02 1.0e?03 1.0e?01 1.0e+00 1.0e+01 0.1 1.0 0.01 0.1 0.2 0.02 d = 0.5 0.05 0.01 single pulse r jc (t) = r(t) r jc d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2
MTP60N06HD http://onsemi.com 8 package dimensions to ? 220 three ? lead to ? 220ab case 221a ? 09 issue aa style 5: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 ??? 1.15 ??? z ??? 0.080 ??? 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 MTP60N06HD/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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